1.3-µm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide.

Quantum well intermixing (QWI) is an effective method for simple and well-defined monolithic integration of photonic devices. We introduce an identical-active electro-absorption modulated laser (IA-EML) with optimized QWI, which is applied to reduce the absorptive waveguide region. To determine the optimal intermixed IA-EML structure, we conduct a comparative analysis between the cases of an IA-EML with only an intermixed waveguide region and with both intermixed waveguide and electro-absorption modulator (EAM) regions, as well as the case without QWI. The results reveal that the intermixed region effectively inhibits the absorption in the waveguide. In particular, the IA-EML with only waveguide intermixing exhibits superior modulation characteristics with low driving voltages and a high extinction ratio. Our work provides an attractive approach for suppressing the absorptive waveguide region in the IA-EML to enhance modulation performance and to develop photonic integrated circuits with a simplified process.

Active control of polarization state of the light in InP waveguide.

We demonstrate an InP deep-ridge type multi-quantum-wells (MQWs) waveguide-based active polarization control scheme by using two positive-intrinsic-negative diode phase shifters. The polarization state of horizontal/vertical linearly polarized input light is rotated along the ± 45°-linear polarization axis on the Poincaré sphere by 45°-eigenmode-rotated first phase shifter 1 and subsequently rotated along the vertical/horizontal axis by second normal phase shifter 2. The rotation of the eigenmode axes is obtained by using the surface plasmonic effect. The effective index of the waveguide is changed via quantum-confined Stark effect in the MQW core. The length of each phase shifter is 240 µm. The applied reverse bias voltages are -2.7 V and -1.95 V for the phase shifter 1 and 2, respectively.

Integrated InP polarization rotator using the plasmonic effect.

we report on an integrated InP based polarization rotator scheme using the plasmonic effect. It operates as a half-wave retarder in ridge waveguide structure. The rotation angle of the eigenmode axes of the half-wave retarder waveguide is determined by the position off a bottom corner of a metal layer placed above the waveguide core in the upper cladding region. The simple rotator structure enables an easy and tolerant fabrication process. The length of the fabricated device is less than 50 µm, and a polarization extinction ratio (PER) of 20 dB has been achieved.

Design and performance of 10-Gb/s L-band REAM-SOA for OLT Transmitter in next generation access networks.

We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of -16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from -16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.

Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.

We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.

10-Gb/s direct modulation of polymer-based tunable external cavity lasers.

We demonstrate a directly-modulated 10-Gb/s tunable external cavity laser (ECL) fabricated by using a polymer Bragg reflector and a high-speed superluminescent diode (SLD). The tuning range and output power of this ECL are measured to be >11 nm and 2.6 mW (@ 100 mA), respectively. We directly modulate this laser at 10 Gb/s and transmit the modulated signal over 20 km of standard single-mode fiber. The power penalty is measured to be <2.8 dB at the bit-error rate (BER) of 10(-10).

Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.

We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON.

We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER.

L-band tunable external cavity laser based on 1.58 µm superluminescent diode integrated with spot-size converter.

We report a 1.58 µm superluminescent diode (SLD) with a spot-size converter (SSC) designed and fabricated as a light source for a tunable external cavity laser (T-ECL). The active section of the SLD is fabricated by using a planar buried heterostructure (PBH) for low-threshold current and high-output power operation at a low injection current. The SSC structure of the SLD is designed to possess a buried deep-ridge waveguide (BD-RWG) and show a beam of less divergence. The full-width at half maximum (FWHM) of the horizontal and vertical far-field patterns (FFPs), due to the beam of the less divergence, are 14° and 13°, respectively. We also confirm that an L-band T-ECL employing the SSC SLD operates well enough to prove the characteristics of high performance.

2.5-Gb/s hybridly-integrated tunable external cavity laser using a superluminescent diode and a polymer Bragg reflector.

We presented a hybridly-integrated tunable external cavity laser with 0.8 nm mode spacing 16 channels operating in the direct modulation of 2.5-Gbps for a low-cost source of a WDM-PON system. The tunable laser was fabricated by using a superluminescent diode (SLD) and a polymer Bragg reflector. The maximum output power and the power slope efficiency of the tunable laser were 10.3 mW and 0.132 mW/mA, respectively, at the SLD current of 100 mA and the temperature of 25 degrees C. The directly-modulated tunable laser successfully provided 2.5-Gbps transmissions through 20-km standard single mode fiber. The power penalty of the tunable laser was less than 0.8 dB for 16 channels after a 20-km transmission. The power penalty variation was less than 1.4 dB during the blue-shifted wavelength tuning.

Improvement of modulation bandwidth in multisection RSOA for colorless WDM-PON.

We demonstrated two-section reflective semiconductor optical amplifier (RSOA) with dramatic improvement of small-signal modulation bandwidth above 10 GHz as colorless source for wavelength division multiplexed-passive optical network (WDM-PON). The device provides the fiber-to-fiber gain of 22.8 dB, 3-dB amplified spontaneous emission (ASE) bandwidth of 30 nm, and ripple of 1.5 dB. Good performance at 2.5 Gbps was obtained with an extinction ratio of 8 dB and a power penalty of 2 dB at a 10(-9) bit error rate (BER) up to 20 km transmission.

Controlling temperature dependence of silicon waveguide using slot structure.

We show that the temperature dependence of a silicon waveguide can be controlled well by using a slot waveguide structure filled with a polymer material. Without a slot, the amount of temperature-dependent wavelength shift for TE mode of a silicon waveguide ring resonator is very slightly reduced from 77 pm/ degrees C to 66 pm/ degrees C by using a polymer (WIR30-490) upper cladding instead of air upper cladding. With a slot filled with the same polymer, however, the reduction of the temperature dependence is improved by a pronounced amount and can be controlled down to -2 pm/ degrees C by adjusting several variables of the slot structure, such as the width of the slot between the pair of silicon wires, the width of the silicon wire pair, and the height of the silicon slab in our experiment. This measurement proves that a reduction in temperature dependence can be improved about 8 times more by using the slot structure.